********************************************************************************
* UnitedSiC G3 1200V-8.6mohm SiC Cascode Spice Circuit Model v3.0
* Copyright 2018 United Silicon Carbide, Inc.
* This is a PRELIMINARY Spice Model of UF3SC120009K4S
*
*
* The model does not include all possible conditions and effects, 
* in particular it doesn't include: 
*	Self heating
*	leakage current in blocking state
*	Drain to source breakdown is notional only
*
********************************************************************************

*** UF3SC120009K4S ***
.subckt UF3SC120009K4S nd ng ns nss

Ld	nd	nd1		5n 
Lmd	ns1	nd2		1p 
Ljg	ng1	ns3		6.5n 
Lmg ng ng2 		10n 
Lms	ns2	ns3		1.7n 
Ls	ns3	ns		2n 
xj1	nd1	ng1	ns1	jfet_G3_1200V_Ron params: Ron=8m Rg=0.5
xm1	nd2	ng2	ns2	mfet201a
Cgd ng2 nd1     5p
Rss ns2 nss     1u
.ends
 
*** 1200V JFETs ***
.subckt jfet_G3_1200V_Ron d g s params: Ron=0 Rg=0
*#ASSOC Category="N-Channel JFET" Symbol=njfet
.param Ron1={Ron}
.param Rg1={Rg}
.param a= {75m / {Ron1}}
X1 di gi s jfet_G3_1200V params: ascale={a}
XCgs gi s Cgs_1200V params: acgs={a}
XCgd gi di Cgd_1200V params: acgd={a}
Cgdex gi di {25p * {a} }
Cgsex gi s {0.2n * {a} }							  
Rd d di Rtemp {58.2m/{a}}
.MODEL Rtemp RES (TC1=3.93e-3, TC2=4.79e-5)
Rgate g gi {Rg1} 
.ends jfet_G3_1200V_Ron

*** Shared Subcircuit for 1200V JFETs ***
.subckt jfet_G3_1200V d g s Params: ascale=0
.param Fc1=0.5
.param Pb1=3.25
.param M1=0.5
.param Vd0=800

.param gos={0.0178*{ascale}}
.param gfs={43*{ascale}}
.param f=1.453
.param vth=-8.3

.param cgs1=0.594n
.param cgd1=0.023n

.param bt={({f}*{gfs}+2*{gos}*{Vd0}/{vth})/2/(-{vth})}
.param lamd={1*{gos}/{bt}/{vth}/{vth}}
.param cgs0={pwr((1+30/{Pb1}),{M1})*{cgs1}}
.param cgd0={pwr((1+{Vd0}/{Pb1}),{M1})*{cgd1}}

J1 d g s jfet_1200 
Dgs g s Dgs_iv 
Dgd g d Dgd_iv 
Rgs  g s 1Meg
Rgd  g d 10Meg

.MODEL jfet_1200 NJF(
+ Beta={{bt}} BetaTce=0 Vto={vth} VtoTc=0  lambda={lamd}
+ Is=1e-60 
+ Cgs={{cgs0}*{ascale}} Cgd={{cgd0}*{ascale}} Fc={Fc1} Pb={Pb1}
+ M={M1})

.MODEL Dgs_iv D (CJO=0 BV=40 IS=1e-50 ISR=1e-50 Eg=3.5 Rs=0)
.MODEL Dgd_iv D (CJO=0 BV=1500 IS=1e-50 ISR=1e-50 Eg=3.5 Rs={9.62m/{ascale}})

.ends jfet_G3_1200V


* Cgs network
.subckt Cgs_1200V g s params: acgs=0
.param c0=1n
.param vsgmin=-2
.param vsgmax=15
.param a1={0.8n*{acgs}}
.param b1=1
.func Qgs1(u) {- {a1} / {b1} *(exp(- {b1} *u)-1)}  


.param a2={0.7n*{acgs}}
.param b2=0.75
.param c2=8.3

.func Qgs2(u) 
+	{if(abs(u)<{vsgmax},
+	{a2}*u + {a2}*(-{b2})*log(cosh((u-{c2})/-{b2}))
+	-{a2}*(-{b2})*log(cosh(-{c2}/-{b2})), 
+	{a2}*{vsgmax} + {a2}*(-{b2})*log(cosh(({vsgmax}-{c2})/-{b2}))
+	-{a2}*(-{b2})*log(cosh(-{c2}/-{b2})))} 

E1 s m1 value={v(s,g)-Qgs1(v(s,g))/{c0}}
C01 m1 g {c0}
E2 s m2 value={v(s,g)-Qgs2(limit(v(s,g),-{vsgmax},{vsgmax}))/{c0}}
C02 m2 g {c0}

.ends Cgs_1200V

* Cgd network
.subckt Cgd_1200V g d params:acgd=0

.param c0=1n

.param a1={0.3n*{acgd}}
.param b1=0.9
.param c1=20
.param vdgmax1=30

.func Qgd1(u) 
+	{if(abs(u)<{vdgmax1},
+	{a1}*u + {a1}*(-{b1})*log(cosh((u-{c1})/-{b1}))
+	-{a1}*(-{b1})*log(cosh(-{c1}/-{b1})), 
+	{a1}*{vdgmax1} + {a1}*(-{b1})*log(cosh(({vdgmax1}-{c1})/-{b1}))
+	-{a1}*(-{b1})*log(cosh(-{c1}/-{b1})))} 

.param a2={0*{acgd}}
.param b2=0.5
.param c2=7
.param vdgmax2=15

.func Qgd2(u) 
+	{if(abs(u)<{vdgmax2},
+	(-1)*({a2}*u + {a2}*(-{b2})*log(cosh((u-{c2})/-{b2}))
+	-{a2}*(-{b2})*log(cosh(-{c2}/-{b2}))), 
+	(-1)*({a2}*{vdgmax2} + {a2}*(-{b2})*log(cosh(({vdgmax2}-{c2})/-{b2}))
+	-{a2}*(-{b2})*log(cosh(-{c2}/-{b2}))))}

E1 d m1 value={v(d,g)-Qgd1(limit(v(d,g),-{vdgmax1},+{vdgmax1}))/{c0}}
C01 m1 g {c0}
E2 d m2 value={v(d,g)-Qgd2(limit(v(d,g),-{vdgmax2},+{vdgmax2}))/{c0}}
C02 m2 g {c0}

.ends Cgd_1200V
 
*** Si MOS Model ***
.SUBCKT	mfet201a	 4 1 2	
							
*Gate-->1  Drain-->4  Src-->2									
					 
.param Ascale=		8.055							
***Ascale used to scale the active area of the mosfet.It could be any positive data									
M1  3 5 9 9 NMOS W={	{Ascale}*	2	}	L=	0.00000033		
M2  9 5 9 3 PMOS W={	{Ascale}*	1.5	}	L=	0.00000036
Ld 4 7 0.1p									
Ls 9 2 0.1p 									
Lg 1 8 0.1p 												
R1 7 3 RTEMP {		0.007	/	{Ascale}	}	
RG 8 5 	0.7	
CGS 5 9	{	5.6e-10	*	{Ascale}	}				
DBD 9 3     DBD									
									
**************************************************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3 									
+ TOX    = 		6.00E-08							
+ NSUB   = 		3.8E+17							
+ VTO=		5.5						
+ THETA  = 		0							
+ kp= 		1.788E-05							
+ TPG = 1  )									
**************************************************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3 	
+ TOX    = 		6.00E-08	
+ NSUB   = 		4.8E+16		
+ TPG = -1  )	
**************************************************************************************************************
.MODEL DBD D (CJO={			{Ascale}	*	2.6E-10	}			
+ VJ= 	0.7								
+ M= 	0.5								
+ RS= 	{0.007/	{Ascale}	}						
+ IS= { {AScale} *		1.706E-12	}						
+ TT= 	8.00E-09								
+ BV= 	35								
+ IBV= 	0.00025	)							
**************************************************************************************************************
.MODEL RTEMP RES (TC1=3E-3)									
.ENDS

*** End of File ***